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DSH 302
0 L# u; l& n& j4 N* G5 S) q | Capacitance+ m' z/ V) ^) U( w; T7 G
| 6.3.1.3
! u+ }7 V, I. h7 ~# }+ h1 j- W* o | 61010-1(ed.1);am1;am2
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Standard:
; \5 m! }5 e0 Q7 LIEC 61010-
2 {: Z3 \0 K( n' M6 K1:1990+A1:1992+A2:1995
V0 N, l+ U- MSub clause:4 E, D3 `: | ?; n$ s, g
6.3.1.3
' P( l& D' g5 q( O' ]Sheet n. 3026 O) F; G* \' I- {2 p
Page 1(1)) |+ u3 r& ^3 U5 S
Subject:6 F& F: u2 Z" b
Capacitance! ~" Q1 p, m8 U4 |! u3 O0 y
Key words:: i+ h8 _ a" Y
- Capacitance/ k5 b% j5 |. n
- Charge
/ I+ a3 U+ p2 m; oDecision taken by
# i J7 o8 F8 ^( M! y/ \ U* GETF3 and confirmed& b' P0 c' f4 @( U* ~
by CTL at its 38th
8 D# ]: m$ i. V) T9 o% {meeting, in Toronto
3 A: b5 ?# O9 h8 d0 x9 }Question:/ r7 q) v7 R7 T7 i& p
How can the stored charge be measured, in particular where the circuit is complex?
& V2 Y- U) E) C xDecision and Explanation:- l: \# y' ~( I" x6 e- z0 y1 G& \" i
Only the charge accessible to the user is of concern under the standard. Therefore, where the
% ~, W# Y: p; s, F3 Kcircuit is complex, it is considered that a method of measurement from the accessible part is
4 u$ U# H2 V+ ?1 lneeded. It is, therefore, recommended that a procedure of discharge through a defined
! {/ I- X8 E5 U& ~1 M# Q: }* A! zresistor is used, monitoring the voltage – time profile to provide a method of calculation of
0 B+ F7 M4 f) M$ _6 vcharge.
8 k0 v8 C! `9 O* h3 [When this method is used it is requested that details are recorded in the report for the benefit
) m0 u% B& ^* C! U- I/ D6 Z: N" Nof CB members.) z l" s9 x- w1 c; f `- L( f
The method described in IEC 60950 Subclause 2.1.10 is recommended.
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