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! e" L; d5 A% n
5 _0 C# b* q( Z | Capacitance
4 o8 v; ^' f- V$ X3 A | 6.3.1.39 P& G2 h1 ^: V) {: E, g7 g* k2 Z
| 61010-1(ed.1);am1;am2& l+ z+ F1 M2 e- E2 P+ V
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$ r* }- C, a% D. i) K2 q1 F
" P% C% V) i( O5 y+ w9 hStandard:
! Q$ I( i; J/ I" Y# X0 j/ z \3 ^IEC 61010-
1 h. W* S" A" V/ H2 c/ }/ X1:1990+A1:1992+A2:1995$ H$ I K4 q; y3 r+ k5 d0 H
Sub clause:) C7 a& I0 W7 |0 @4 D0 z
6.3.1.3
0 d/ u8 u1 F4 a9 ZSheet n. 302
) z" W$ W( z# SPage 1(1)6 @0 c2 L6 x3 ]5 w9 W6 j
Subject:# o$ o# _7 r; V! |% V$ e9 s$ o
Capacitance
9 c& a2 m I6 M5 b5 W2 lKey words:
/ i( M# w m/ k2 W6 m- Capacitance- y6 v8 g5 S& t) D
- Charge
N" F3 q9 t9 D1 VDecision taken by
, {# ~( G2 `9 D7 S' Z7 XETF3 and confirmed0 x) s0 W+ {/ q
by CTL at its 38th% ~/ N9 p/ T ^, [' `2 l0 L% e
meeting, in Toronto
5 `7 L+ l- m4 I* |6 Y5 hQuestion:
; m) g I/ ]( F/ H5 Z9 D5 D9 kHow can the stored charge be measured, in particular where the circuit is complex?# c! b+ _: K, Q0 o# R
Decision and Explanation:
3 n [- a- f' w) e6 MOnly the charge accessible to the user is of concern under the standard. Therefore, where the
8 h9 M" R1 m# c! }$ |% }3 Acircuit is complex, it is considered that a method of measurement from the accessible part is
+ J8 Z2 N% j: S0 H2 Y( lneeded. It is, therefore, recommended that a procedure of discharge through a defined
4 a- G* _# N+ w+ Xresistor is used, monitoring the voltage – time profile to provide a method of calculation of
7 y }! C8 @0 u& Mcharge.. J: o$ l, A9 B4 e4 z
When this method is used it is requested that details are recorded in the report for the benefit9 G( O7 q4 t u0 v2 K7 [
of CB members.
( r2 s: U3 i% w# x* HThe method described in IEC 60950 Subclause 2.1.10 is recommended.& f8 B; o3 R* h. ^
5 e2 z: S2 [# W+ x5 O: W9 x
9 t' P( u* s5 {5 l% ^4 p* U' Q3 o: Y1 \! J5 q% i" I1 E, w
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发表于 2012-9-19 15:03
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