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- c5 {) _$ S/ m' I. ?& [
- r, _+ a& d1 \" A
| Capacitance3 `' c4 L: l% [, _6 f+ X
| 6.3.1.3) u {& U# c" b# a3 n8 x; e. t& [& M
| 61010-1(ed.1);am1;am2
* g& }3 k0 T$ x |
: S% O9 J( I u Q
2 k! G4 E) A* X! ~; q
Standard:
% n' w5 t1 R1 f' x* g8 ^IEC 61010-! i0 d2 \2 a. J( X9 T) i
1:1990+A1:1992+A2:1995
( i+ J. A6 Y4 W+ c4 L7 oSub clause:8 I" M; l& K# @
6.3.1.3
7 A: U3 u( }* J3 G# [8 [6 S; x7 [Sheet n. 302; e7 a6 {' `! _: v6 [( c
Page 1(1)! I7 _ n$ d# y0 a
Subject:2 M4 t+ U0 ^& N1 v6 o
Capacitance0 {; ?+ |: R" `, o4 \
Key words:
. \9 O* Y4 p) F# P4 b; o- Capacitance
% z$ S9 k' l8 Y6 v& q4 k- Charge
# h) K. p8 d, B/ xDecision taken by
t" U$ j+ L) K4 F& n+ oETF3 and confirmed8 }7 N1 ~8 F* y0 X0 ?5 d
by CTL at its 38th
2 Q- p. N/ S- k Q( t+ smeeting, in Toronto
, a. V. b( w8 e& G8 WQuestion:4 [9 S3 x+ c; S- Y k/ ~/ J5 d
How can the stored charge be measured, in particular where the circuit is complex?- g9 I- a. ?; P/ a+ ?1 p
Decision and Explanation:
" o# i; f" h# B& xOnly the charge accessible to the user is of concern under the standard. Therefore, where the
6 N2 r3 J# c, Wcircuit is complex, it is considered that a method of measurement from the accessible part is+ ^& a: ^: M/ ?
needed. It is, therefore, recommended that a procedure of discharge through a defined
0 x' x0 Z+ @7 {/ z, L3 b2 tresistor is used, monitoring the voltage – time profile to provide a method of calculation of& b; Z2 N+ {/ K3 L& Q* Y5 x5 b4 `9 O
charge.
' Y( D1 h' _/ rWhen this method is used it is requested that details are recorded in the report for the benefit
, v! }" T& A- [3 K) r( Uof CB members.6 R: n1 t' B5 z# w2 O4 Z
The method described in IEC 60950 Subclause 2.1.10 is recommended.6 K( F( K4 D2 Y+ v# c2 ~
2 e, Y+ [: A* w* x. A# A K# Z- f" P$ r/ h
4 ]* q: X/ f% ?6 w" T) M$ u
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