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如何对MOS 做IEC 60335-1 A2 cl 19.11.2 g)的测试？& j0 ~. O( D+ P. e
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节示标准如下：" R, V/ b- `1 g9 n& j1 m
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19.11.2 g) failure of an electronic power switching device in a partial turn-on mode with loss of gate (base) control. During this test, winding temperatures shall no exceed the values give in 19.7.
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NOTE 3 This mode may be simulated by disconnecting the electronic power switching device gate (base) terminal and connecting an external adjustable power supply between the gate (base ) terminal and the source (emitter) terminal of the electronic power switching device. The power supply is then varied so as to achieve a current that will not damage the electronic power switching device but give the most onerous conditions of test.
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: ~( Z0 Q3 j/ N, V. W: r标准的意思:+ w# l( }. S, k/ }8 H y+ H' q# U
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将MOS管的栅级断开再外加电源为MOS管供电，目的是要模拟出既要MOS不烧坏又要出现发热的最严酷的情况。标准上只是说了个原则上是：既要MOS不烧坏又要出现发热的最严酷的情况.& \. y8 z- l1 `* W, o" D
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但是实际操作比较困难!
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& t$ U, S1 C! Q) y/ T: J那位大佬有没有比较好的办法分享一下? 谢谢! |
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发表于 2010-7-18 09:12
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