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如何对MOS 做IEC 60335-1 A2 cl 19.11.2 g)的测试？
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+ z; N5 Q( R) z0 J0 M# n: `节示标准如下：! C0 `7 G: ]7 K4 {) F. ~# l5 Y
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19.11.2 g) failure of an electronic power switching device in a partial turn-on mode with loss of gate (base) control. During this test, winding temperatures shall no exceed the values give in 19.7.6 X. h, Y3 ]: \1 \4 F6 ~
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NOTE 3 This mode may be simulated by disconnecting the electronic power switching device gate (base) terminal and connecting an external adjustable power supply between the gate (base ) terminal and the source (emitter) terminal of the electronic power switching device. The power supply is then varied so as to achieve a current that will not damage the electronic power switching device but give the most onerous conditions of test.
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标准的意思:
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1 ^# @% Y2 V0 W& l0 J& V. Y6 K+ t将MOS管的栅级断开再外加电源为MOS管供电，目的是要模拟出既要MOS不烧坏又要出现发热的最严酷的情况。标准上只是说了个原则上是：既要MOS不烧坏又要出现发热的最严酷的情况.8 Q* S X7 {) a7 R. c
5 o* L, e0 D" k6 x( v, a" r但是实际操作比较困难!! |9 N+ W6 a% C4 k# T% q% l
/ e* ]5 W( ?8 G7 y+ j) P& E那位大佬有没有比较好的办法分享一下? 谢谢! |
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发表于 2010-7-18 09:12
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